GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, announced today that its electronica India displays will highlight the company’s technology leadership for next generation electric vehicle power systems. Attendees can visit Transphorm at Hall 2, Booth E2D31 during the event on September 13 – 15 in the Bangalore International Exhibition Centre.
With a global GaN TAM of $642 million in 2023 (estimated), the electric vehicle mobility/charging market for/in scooters and e-bikes to auto-rickshaws, trucks, and cars is recognized as an optimal industry to benefit from the performance, efficiency, and price advantages offered by GaN power conversion. Transphorm’s innovations and products ramped in the field to date include a variety of “first, best, only” achievements and a future roadmap that position the company as the leading robust GaN device provider capable of supporting EV system requirements. Such achievements include:
- Unmatched platform reliability: < 0.05 FIT with more than > 200 billion field operation hours.
- Proven 50% higher power density with over 99% efficiency at 20% lower overall system cost.
- 650 V SuperGaN® devices in use across low- to high-power in-production customer applications today.
- Demonstrated 5 μs short circuit capability and 1200 V GaN technology in development.
The company’s electric vehicle application benefits will be showcased via various reference designs and evaluation kits. These design tools demonstrate the SuperGaN® platform’s advantages for power systems used in 2-wheelers, 3-wheelers, electric cars such as onboard/offboard chargers, battery swapping chargers, pole chargers, and more. Highlighted demos include:
- 300 W EV CC CV CCM PFC+ LLC Charger Board
- 750 W Onboard Charger Board
- 2.2 kW E-Bike Fast Charger Board
- 2.5 kW Bridgeless Totem Pole PFC Board
- 3 kW Inverter Board
- 4 kW Bridgeless Totem Pole PFC Board
One Core Platform, Crossing the Power Spectrum
Transphorm is the leading GaN power semiconductor company differentiated by its technology’s high manufacturability, easy designability, easy drivability, and high reliability. The company today supports the largest range of power conversion requirements (45 W to 10+ kW) across the widest range of power applications. Transphorm’s FET portfolio includes 650 V devices with 1200 V device(s) in development. These devices are JEDEC and AEC-Q101 qualified, making them optimal solutions for power adapters and computer PSUs through to broad industrial UPSs and electric vehicle mobility systems.
Meet With Us
To schedule a meeting with Transphorm during the show, please contact email@example.com or stop by the Transphorm booth Hall 2, Stall E2D31.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.